Analysis of the etch pit shape on SiC wafers
Introducing a case where etch pits formed on SiC wafers were observed using a 3D X-ray microscope (X-ray CT)!
In order to promote the spread of power semiconductors, the development of low-defect SiC wafers is underway. X-ray CT is a non-destructive method that visualizes the shape of materials in three dimensions and allows for quantitative evaluation. In the PDF document, you can view the CT images obtained when observing the etch pits formed on SiC wafers using a 3D X-ray microscope (X-ray CT). [Overview] ■ Shape analysis of etch pits using X-ray CT *For more details, please refer to the PDF document or feel free to contact us.
- Company：東芝ナノアナリシス
- Price：Other
